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Trajectories of the primary and signal electrons between detector and sample (a); electron channelling pattern taken on the Al (111) single crystal, together with the darkened centre of the field of view (b). (White lines in (b) are residual scratches filled with the oxide.)
Reflectance curves for the as-inserted status of a fresh cleaved HOPG and for the same, in-situ annealed.
Comparison of the reflectance curves for the fundamental orientations (100), (110), and (111) of the Al single crystals, with electron energies marked for which the micrographs are shown in Figure 4.
Micrographs of a clean and restored polycrystalline aluminum surface shown at electron energies 7.8 eV (a), 17.4 eV (b), 24.6 eV (c), 30.9 eV (d), and 40.8 eV (e), together with inverse pole map containing pixels from three grains marked as A, B, and C (f).
Comparison of the reflectance curves for the Al (110) crystal and grain A (marked in Figure 4) (a) and the same for the Al (111)/grain B (b) and the Al (100)/grain C (c) couples; comparison of the curves for two crystal grains situated at a certain distance (d), and for five adjacent sites on Al (100) (e).
The reflectance curve for Al (100) compared with results of calculations reproduced from Krasovskii and Schattke, Ref. 15 (see the inset: ab initio calculation is shown in dots, and single carrier approximation in full line).
Micrograph of the as-pressed status of the UFG copper taken at 5 eV (a), the UFG copper after partial relaxation by annealing, imaged at 2 eV (b), the corresponding EBSD orientation map of the same field of view (c), and the color coding triangle (d).
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