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Improvement of oxygen vacancy migration through Nb doping on Ba0.7Sr0.3TiO3 thin films for resistance switching random access memory application
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10.1063/1.4730400
/content/aip/journal/apl/100/26/10.1063/1.4730400
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730400
/content/aip/journal/apl/100/26/10.1063/1.4730400
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/content/aip/journal/apl/100/26/10.1063/1.4730400
2012-06-27
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of oxygen vacancy migration through Nb doping on Ba0.7Sr0.3TiO3 thin films for resistance switching random access memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730400
10.1063/1.4730400
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