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Improvement of oxygen vacancy migration through Nb doping on Ba0.7Sr0.3TiO3 thin films for resistance switching random access memory application
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10.1063/1.4730400
/content/aip/journal/apl/100/26/10.1063/1.4730400
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730400

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of Nb-doped BST layer fabrication with three ceramic targets of BaTiO3, SrTiO3, and Nb2O5.

Image of FIG. 2.
FIG. 2.

XRD patterns of undoped/Nb-doped BST annealed at 700 °C.

Image of FIG. 3.
FIG. 3.

Hysteretic I-V characteristic curves of (a) undoped BST and (b) Nb-doped BST with the various cycle numbers.

Image of FIG. 4.
FIG. 4.

The retention characteristics of undoped BST and Nb-doped BST thin films at room temperature as measured at 0.5 V.

Image of FIG. 5.
FIG. 5.

XPS spectra of O 1 s electrons after AFM tip induced electrical stress for (a) undoped and (b) Nb-doped BST.

Image of FIG. 6.
FIG. 6.

Current mapping images during resistance switching operation under ±7 V for (a) undoped and (b) Nb-doped BST.

Image of FIG. 7.
FIG. 7.

Topology of (a) undoped/(c) Nb-doped BST measured by AFM and surface morphology of (b) undoped/(d) Nb-doped BST measured by SEM.

Tables

Generic image for table
Table I.

Surface compositions of undoped/Nb-doped BST by XPS.

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/content/aip/journal/apl/100/26/10.1063/1.4730400
2012-06-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of oxygen vacancy migration through Nb doping on Ba0.7Sr0.3TiO3 thin films for resistance switching random access memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730400
10.1063/1.4730400
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