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(a) Bright- and (b) dark-field TEM images of an a-plane AlGaN/GaN MQWs sample with 3.4 nm well thickness taken along the GaN zone axis in the same region. The intersection of BSFs and MQWs is observed in (c).
(a) Low-temperature PL spectra of AlGaN/GaN MQWs with different well thicknesses, fitted based on two Gaussian-type distribution functions (open symbol), illustrating the influence of BSFs-related emission (low energy) and QWs emission (high energy), respectively. (b) BSFs-related emission and QWs emission lines as a function of the well thickness, and (c) the integrated intensity ratio of these two emission lines, summarizing as a function of the well thickness.
(a) Temperature-dependent PL spectra of AlGaN/GaN MQWs with 7.3 nm well thickness. (b) The emission energies at temperature ranging from 10 to 300 K for the different well thicknesses. The solid lines are the fit of the data with the Varshni’s formula, and the symbols stand for the measurement data.
The normalized PL intensities for AlGaN/GaN MQWs with 1.6 and 7.3 nm well thicknesses plot as a function of 1/T. The symbols stand for the measurement data, fitting by Arrhenius equation to investigate the carrier localization behavior during the thermal processes.
Summary of the optical properties at 10 K for Al0.17Ga0.83 N/GaN MQWs with different well thickness.
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