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Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor
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10.1063/1.4730955
/content/aip/journal/apl/100/26/10.1063/1.4730955
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730955
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of resistivity of sample A (solid curve) and sample B (dashed curve). Inset shows relationships between the current i , the magnetic field H , the magnetization M , and angles α, ϕ, and φ in our measurements. M is parallel to H because of the high field (8.7 kOe). α is the angle between M and the [100] crystal axis, ϕ is the angle between M and the [110] crystal axis, and φ is the angle between M and i .

Image of FIG. 2.
FIG. 2.

Longitudinal anisotropic magnetoresistance data (squares) for (a) the [110] Hall bar (i = 10 μA//[110]) and (b) the [] Hall bar (i = 10 μA//[]) of sample A as a function of α, measured at 20 K under a magnetic field of 8.7 kG. Solid curves are fitting curves using C 2 = −0.038%, C 4 = 0%, C 8 = 0.025% for the [110] Hall bar, and C 2 = −0.052%, C 4 = 0%, C 8 = 0.03% for the [] Hall bar in Eq. (2), respectively.

Image of FIG. 3.
FIG. 3.

Longitudinal anisotropic magnetoresistance data (squares) for (a) the [110] Hall bar (i = 1 mA//[110]), and (b) the [] Hall bar (i = 1 mA//[]) of sample B as a function of α, measured at 20 K under a magnetic field of 8.7 kG.Solid curves are fitting curves using C 2 = 0.0034%, C 4 = 0%, C 8 = 0% for the [110] Hall bar, and C 2 = 0.012%, C 4 = 0%, C 8 = 0% for the [] Hall bar in Eq. (2), respectively.

Image of FIG. 4.
FIG. 4.

Planar Hall resistance data (squares) for (a) the [110] Hall bar (i = 5 mA//[110]) and (b) the [] Hall bar (i = 1 mA//[]) of sample B as a function of φ, measured at 20 K under a magnetic field of 8.7 kG. Solid curves are fitting curves using C 1 = −1.8 × 10−5, C 1,c = 0 for the [110] Hall bar, and C 1 = −2.8 × 10 − 5, C 1,c = 0 for the [] Hall bar in Eq. (1b), respectively.

Image of FIG. 5.
FIG. 5.

Plan view of nearest (a) In atoms and (b) As atoms around an Fe atom. In atoms have an effective charge of +ɛe, while As atoms have an effective charge of −γe, seen from a d-electron. A d-electron with the d xy wave function will be closer to its nearest In/As atoms when its wave function is aligned along the 〈110〉 direction (dashed curve) rather than the 〈100〉 direction (solid curve).

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/content/aip/journal/apl/100/26/10.1063/1.4730955
2012-06-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730955
10.1063/1.4730955
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