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Effect of proton bombardment on InAs dots and wetting layer in laser structures
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10.1063/1.4730964
/content/aip/journal/apl/100/26/10.1063/1.4730964
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730964
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Modal absorption spectra for the unbombarded sample (solid line) and bombarded samples using a proton dose of 1 × 1011 protons cm−2 (dotted line) and 1 × 1012 protons cm−2 (dashed line) at 300 K. Inset: TEM images of the quantum dot layers courtesy of Integrity Scientific Ltd. (a): Unbombarded sample. (b): Proton dose of 1 × 1014 protons cm−2.

Image of FIG. 2.
FIG. 2.

Reciprocal of the experimentally measured GS carrier lifetime (black squares) and modeled carrier lifetime (black line) versus proton dose at 100 K.

Image of FIG. 3.
FIG. 3.

Experimentally measured GS PL versus measured ground state lifetime (bottom x-axis) and proton dose (top x-axis) for pump powers of 36 mW (squares), 18 mW (triangles), and 12 mW (inverted triangles) at 100 K. The solid lines are fits including WL recombination for the same pump power. The dash line indicates the linear behaviour expected for a fixed dot carrier population.

Image of FIG. 4.
FIG. 4.

Experimentally measured WL PL versus dose for pump powers of 36 mW (squares), 18 mW (triangles), and 12 mW (inverted triangles) at 100 K. The solid lines are fits to the experimental data with the same parameter values as in Fig. 3.

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/content/aip/journal/apl/100/26/10.1063/1.4730964
2012-06-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of proton bombardment on InAs dots and wetting layer in laser structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730964
10.1063/1.4730964
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