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Three-state resistive switching in CoFe2O4/Pb(Zr0.52Ti0.48)O3/ZnO heterostructure
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10.1063/1.4730965
/content/aip/journal/apl/100/26/10.1063/1.4730965
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730965
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Figures

Image of FIG. 1.
FIG. 1.

(a) A schematic drawing of the configuration, (b) cross-sectional SEM image, and (c) XRD characterization of the CFO/PZT/ZnO film.

Image of FIG. 2.
FIG. 2.

(a) Stimuli sequence of electric voltage pulse and magnetic bias for switching resistance state measurements. (b) Current as a function of time measured at fixed read voltage bias of 1 V. (c) Enlarged current-time curves extracted from (b). Each +8 V and −8 V write pulse were applied for 100 ms. The magnetic bias was set at 1.0 kOe.

Image of FIG. 3.
FIG. 3.

(a) I-V curves measured at various magnetic bias. (b) Current as a function of magnetic bias measured at ±10 V.

Image of FIG. 4.
FIG. 4.

(a) C-V curves measured at various magnetic bias and fixed frequency of 1.0 kHz. The arrows indicate the sweep direction. (b) P-V loops measured at various magnetic bias and fixed frequency of 10.0 kHz.

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/content/aip/journal/apl/100/26/10.1063/1.4730965
2012-06-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Three-state resistive switching in CoFe2O4/Pb(Zr0.52Ti0.48)O3/ZnO heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4730965
10.1063/1.4730965
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