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(a) A schematic drawing of the configuration, (b) cross-sectional SEM image, and (c) XRD characterization of the CFO/PZT/ZnO film.
(a) Stimuli sequence of electric voltage pulse and magnetic bias for switching resistance state measurements. (b) Current as a function of time measured at fixed read voltage bias of 1 V. (c) Enlarged current-time curves extracted from (b). Each +8 V and −8 V write pulse were applied for 100 ms. The magnetic bias was set at 1.0 kOe.
(a) I-V curves measured at various magnetic bias. (b) Current as a function of magnetic bias measured at ±10 V.
(a) C-V curves measured at various magnetic bias and fixed frequency of 1.0 kHz. The arrows indicate the sweep direction. (b) P-V loops measured at various magnetic bias and fixed frequency of 10.0 kHz.
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