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Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)
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10.1063/1.4731245
/content/aip/journal/apl/100/26/10.1063/1.4731245
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4731245
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electrical transport in the (Ga,Mn) (As,P) layer, in accumulation and depletion states of the ferroelectric gate. (a) Temperature dependence of Rsheet and the on/off ratio (inset). (b) Temperature derivative of Rsheet . (c) Illustration of thermal activation behavior and comparison to a reference device without phosphorus co-doping. (d) Extracted activation energies for the two ferroelectric gate states in both devices.

Image of FIG. 2.
FIG. 2.

(a) Ferroelectric gate modulation of AMR in a saturating field of 0.5 T, rotated in the out-of-plane geometry, illustrated in (b). (c) Temperature dependence of the AMR magnitude and (d) its scaling with the zero-field sheet resistance of the (Ga,Mn)(As,P) channel.

Image of FIG. 3.
FIG. 3.

(a) Ferroelectric switching of the AMR symmetry in a saturating field of 0.5 T, rotated in the sample plane, as illustrated in (b). (c) Temperature dependence of the 2nd and 4th order contributions (C 2 ψ and C 4 ψ ) to the in-plane AMR.

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/content/aip/journal/apl/100/26/10.1063/1.4731245
2012-06-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4731245
10.1063/1.4731245
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