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Fabrication and characterization of a silicon metal-oxide-semiconductor based triple quantum dot
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10.1063/1.4731275
/content/aip/journal/apl/100/26/10.1063/1.4731275
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4731275
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Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-section view of a Si MOS based triple quantum dot device. (b) Scanning electron micrograph of the depletion gates layout of a similar device with pink dots marking the locations of three dots. (c) measured as a function of and at 330 mK. Three sets of parallel lines are visible. Green, magenta, and blue lines are drawn for guidance, corresponding to addition of one more electron into left, right, and middle dot, respectively. The transition from (1, 0, 2) to (1, 1, 2) is hardly seen since the tunneling of electrons in/out of middle dot at these places is too slow to detect given the modulation frequency. Electron number is counted and written in the sequence of left, middle, and right. The (1, 1, 1) regime is essential for the exchange-only spin qubit.

Image of FIG. 2.
FIG. 2.

Evolution of achieving quadruple points. From (a)-(f), is increased by 3 mV each frame. The transport channel is grounded. (a) Two triple points, where middle and right dot (red) and left and right dot (blue) are on resonance. (b) A regime emerges which signifies the QCA effect. Crossing green line means electron number changed by one in left dot. Crossing pink line (intentionally extended for comparison) involves addition of an electron onto left dot and tunneling of one electron from middle dot to right dot. Red and green lines have different slope. (c), (d) Two triple points are brought together by adjusting . (e) Two charge transfer lines meet up at one point (green), achieving the quadruple point. (f) By adjusting , the three dots are off resonance again with triples points move apart.

Image of FIG. 3.
FIG. 3.

(a) Equivalent circuit model for triple quantum dot. (b) Experimental stability diagram, green, blue, and magenta lines represent the charge transition of left, middle, and right dot, respectively. (c)-(g) Calculated stability diagram with increasing middle dot plunger gate potential in each frame. The evolution shows the same trend as in the experimental result in Fig. 2. (f) Pink line (intentionally extended) marks the places which involve charge transition and reconfiguration. Its slope is different from the left dot charging line nearby.

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/content/aip/journal/apl/100/26/10.1063/1.4731275
2012-06-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of a silicon metal-oxide-semiconductor based triple quantum dot
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4731275
10.1063/1.4731275
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