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Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes
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10.1063/1.4731625
/content/aip/journal/apl/100/26/10.1063/1.4731625
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4731625
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of device structure. Vx is the component of the forward voltage in the x direction and Vy is that in the y direction.

Image of FIG. 2.
FIG. 2.

Experimental and simulated (a) output power and (b) IQE as a function of current for the 6-QW and 9-QW LEDs.

Image of FIG. 3.
FIG. 3.

Simulated (a) output power, (b) I-V, and (c) IQE curves of the LEDs with different numbers of QWs.

Image of FIG. 4.
FIG. 4.

Power conversion efficiency of the LEDs with different numbers of QWs at various currents.

Image of FIG. 5.
FIG. 5.

(a) Electron current density at the middle of n-GaN layer, (b) hole, and (c) electron current densities at the middle of p-GaN layer for the LEDs with different numbers of QWs at 42 A/cm2.

Image of FIG. 6.
FIG. 6.

(a) Electron current density, (b) hole current density, and (c) radiative recombination rates in the plane of the first QW for the LEDs with different numbers of QWs at 42 A/cm2.

Image of FIG. 7.
FIG. 7.

Potential (a) in the x direction at the middle of the p-GaN layer and (b) in the y direction at x = 200 μm for the LEDs with different numbers of QWs at 42 A/cm2.

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/content/aip/journal/apl/100/26/10.1063/1.4731625
2012-06-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/26/10.1063/1.4731625
10.1063/1.4731625
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