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Transfer ID-VG characteristics of a-ZTO TFTs in different oxygen partial pressures (10 torr, 100 torr, and 760 torr) and after illumination of visible light with an intensity of 5000 lux in oxygen ambient of 760 torr, respectively. The inset shows the schematic cross-sectional view of a fabricated bottom-gate a-ZTO TFT.
(a) Transfer ID-VG characteristics of a-ZTO TFTs after experimental repetition of a-60-V-gate-bais for 120 s and subsequent relaxation for 120 s in oxygen ambient. (b) ID-VG characteristics of a-ZTO TFTs after 120 s illumination time and subsequent relaxation for 120 s in oxygen ambient.
Time dependence of drain current which is extracted with fixed gate voltage of 8 V and drain voltage at 1 V for repeating the oxygen adsorption/desorption cycle.
Variation of extracted ID ratio of on/off state as a function of reset and adsorption time with different wavelengths (λ = 660, 550, and 490 nm) of visible light.
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