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Simultaneous flattening of Si(110), (111), and (001) surfaces for three-dimensional Si nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Tapping-mode AFM image (2000 × 2000 nm) of flattened Si(110) surface produced by a low-pH HF treatment and a subsequent H2 anneal. Annealing was performed in 0.1 Torr of H2 at 800 °C. (b) UHV-STM image (200 × 200 nm) of a flattened Si(110) surface. A cross-sectional profile of the stepped surface along the lines A-B in (b) is also shown.

Image of FIG. 2.
FIG. 2.

(a) Magnified (11 × 11 nm) UHV-STM image of a flat Si(110) terrace. A schematic top view of the Si(110) ball-stick model is also shown. The open and closed balls, respectively, indicate H and Si. The zigzag line in the model indicates the arrangement of H atoms, consistent with the atomic arrangement shown in the STM image.

Image of FIG. 3.
FIG. 3.

UHV-STM images (50 × 50 nm) of flattened (a) Si(111) and (b) (001) surfaces produced by a low-pH HF treatment and a H2 anneal. The insets show magnified atomic resolution images ((a) 3 × 3 nm; 1 × 1:H and (b) 5 × 5 nm; 2 × 1:H). Stable step directions, which are parallel to the step edges, are superimposed.

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM images of a SiNW in the 〈100〉 direction (a) before and (b) after the H2 anneal. (c), (d), and (e) Cross-sectional TEM images of the SiNW after the H2 anneal, taken along the 〈110〉, 〈111〉, and 〈112〉 SiNW directions. An ALD-HfO2 layer and a poly-Si capping layer were deposited after SiNW formation.

Image of FIG. 5.
FIG. 5.

Schematic models of SiNWs for (a) 〈100〉, (b) 〈110〉, (c) 〈111〉, and (d) 〈112〉 long-axis directions. Stable step directions are indicated on the (001) and (111) facets. The SiNW in the 〈110〉 direction is the most stable. The SiNW in the 〈111〉 direction also seems stable because the sidewall facet boundaries are stable.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simultaneous flattening of Si(110), (111), and (001) surfaces for three-dimensional Si nanowires