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Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets
1. E. Berkowicz, D. Gershoni, G. Bahir, E. Lakin, D. Shilo, E. Zolotoyabko, A. C. Abare, S. P. DenBaars, and L. A. Coldren, Phys. Rev. B 61(16 ), 10994 (2000).
7. H. Zhong, A. Tyagi, N. N. Fellows, F. Wu, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 90, 233504 (2007).
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We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaNnanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells(MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy. Owing to the high aspect ratio of the GaNnanosheetstructure, the MQWs predominantly grow on nonpolar GaN planes. The results suggest that GaNnanosheets provide a conduction path for device fabrication and also a growth template to reduce the piezoelectric field inside the active region of InGaN-based light emitting diodes.
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