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(Color online) (a) SEM image of a fabricated SET, where the single NP marked by the arrow contributes to the electron transfer process. (b) Equivalent circuit of SET. (c) Experimentally observed and (d) theoretically reproduced differential conductances for the SET as functions of the drain bias and gate bias at a temperature of 9 K. (e) Coulomb oscillation at a drain bias of 40 mV. (f) Tunneling current as a function of the drain voltage (V d) for two gate voltages. At V on (V off), tunneling of electrons is allowed (suppressed).
(Color online) (a-d) Examples of differential conductance plots measured at 9 K that show ideal Coulomb diamonds.
(Color online) (a-c) Temperature dependent Coulomb diamonds of the device shown in Fig. 2(a). (d) Temperature dependent on/off current ratio in Coulomb oscillations.
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