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(Color online) AFM images for three representative QD samples: (a) sample #1—InAs QDs grown directly on GaAs buffer; (b) sample #2—InAs QDs grown on 50-s Sb-soaked GaAs buffer; (c) sample #3—InAsSb QDs grown on 60-s Sb-soaked GaAs buffer. (d) Statistical results for a set of InAs QD samples grown on GaAs soaked with Sb for different soak durations.
(Color online) Shows the low temperature (10 K) PL of the three representative samples in Fig. 1, normalized to the maximum intensity of each sample for (a) low excitation intensity (I exc = 2.2 × 10−5 I 0, I 0 = 1000 W/cm2) and (b) high intensity (I exc = 5 I 0). (c) Shows the PLE spectra normalized to the GaAs-band edge excitation at ∼818 nm with detection at the QD ground state emission. (d) Computed band profiles of InAsSb/GaAs QDs with Sb content of 0% (black lines) and 5% (red lines).
(Color online) (a) The PL maximum, E max, for the λ = 893 nm transition plotted against the cube root of the excitation intensity in sample #3. (b) The cw PL spectra in the vicinity of the λ = 893 nm transition measured in sample #3 at low (T = 10 K) temperature and low (I exc = 2.2 × 10−5 I 0) and high (I exc = 5 I 0) excitation intensities together with the time-integrated PL signal (filled circles). (c) The normalized low and high excitation power PL spectra in sample #3 together with the PL decay times (empty circles) excited with 2-ps laser pulses at λ = 750 nm from a Ti:sapphire laser.
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