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Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings
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10.1063/1.3676437
/content/aip/journal/apl/100/3/10.1063/1.3676437
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/3/10.1063/1.3676437
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM images of the InAsSbP type-II QDs in plain (a) (S = 5 × 4.3 μm2) and oblique (b) (S = 1 × 1 μm2) view, as well as HR-SEM images (c) (S = 1.4 × 1.4 μm2) of the QRs (d and eenlarged view) grown by LPE on InAs (100) substrate.

Image of FIG. 2.
FIG. 2.

(Color online) (a)—Room temperature high-precision C–V characteristics of sample 1 (blue triangles) and sample 2 (red circles); (b) and (c)—an enlarged view of dips with the polynomial fitting curves.

Image of FIG. 3.
FIG. 3.

(Color online) Sheet resistance (magnetoresistance) versus magnetic field at Faraday (perpendicular to the substrate surface—Z) and Voigt (parallel to the substrate surface—X and Y, at ) geometries of sample 1—(a) and sample 3—(b).

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/content/aip/journal/apl/100/3/10.1063/1.3676437
2012-01-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/3/10.1063/1.3676437
10.1063/1.3676437
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