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(Color online) (a) Scanning electron microscopy image of a GNR FET device before the final resist lift-off step (the resist was left on to enhance the contrast) with the transfer characteristics shown in the inset; (b) Raman spectrum taken from the large-area graphene electrode showing the G and 2D peaks; (c) Raman spectra taken from the large-area graphene (open circles) and the GNR channel (solid circles) fitting with a single Lorentzian; and (d) electric potential profile measured along the GNR channel with the potential map shown in the inset (scale bar: 1 μm).
(Color online) (a) Schematics of the scanning gate microscopy; (b) transconductance image with the dashed lines indicating the location of the GNR and with the crosses (×a, ×b, and ×c) marking the positions where the gm (V BG) curves were measured; (c) and (d) transconductance images of two other GNR devices with the scale bars of 200 nm.
(Color online) (a)–(c) Scanning impedance microscopy, transconductance, and AFM topography images of the GNR device shown in Figure 2(b). Dashed lines in (a) and (b) indicate the center position of the GNR. Scale bars in (a)–(c): 100 nm.
(Color online) gm (V BG) curves (various dashed lines) measured at (a) D1 and (b) D2, ×a, ×b, and ×c, with the solid line representing G (V BG) in both (a) and (b).
(Color online) Contour maps of gm at V BG of (a) −9 V, (b) 1 V, (c) 5 V, and (d) 9 V. The solid straight lines in each figure indicate the positions of the graphene electrodes.
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