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(Color online) (a) X-ray diffraction patterns of the (In1−xFex)2O3 (x = 0, 0.1, and 0.18) thin films deposited on (100) MgO substrates at 600 °C in 10−5 Torr of oxygen. The film thickness is ∼350 nm for all films. (b) XRD patterns of (222) peaks showing a clear shift to higher angles with increasing Fe-doping level. (c) Lattice parameter (Å) versus Fe concentration (x) for the (In1−xFex)2O3 series.
Magnetization versus magnetic field (M-H) curves of (In1−xFex)2O3 films measured by VSM at 300 K. The field (H) was applied perpendicular to the film plane. Top-left inset shows magnetic M-H curves before subtracting the diamagnetic substrate. Bottom-right inset provides hysteresis loops of the (In0.82Fe0.18)2O3 film with the magnetic field applied parallel and perpendicular to the film plane.
Anomalous Hall effect loops of (In1−xFex)2O3 films measured at 300 K by PPMS. Top-left inset provides the ρ AH(H) and M(H) curves as a function of the field (H) perpendicular to the film plane for film with x = 0.1. Bottom-right inset provides ρ AH versus MS for (In1−xFex)2O3 (x = 0, 0.1, 0.18) films, showing a linear relationship between ρ AH and M.
Transport and magnetic properties of (In1−xFex)2O3 (x = 0, 0.1, 0.18) films. The magnetic field (H) is applied perpendicular to the film plane. n is the carrier concentration, ρ is the resistivity, H C is the coercivity, and M S is the saturation magnetization.
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