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Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
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10.1063/1.3678041
/content/aip/journal/apl/100/3/10.1063/1.3678041
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/3/10.1063/1.3678041
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Summary of one of the step-stress experiments carried out within this work. During stress at moderate gate voltage levels (here, for |VG| < 30 V), gate current decreases monotonically during each step. At a certain step (here, for VG = −30 V), gate current becomes noisy, indicating that the device is about to degrade. Degradation is detected as a non-recoverable increase in gate current (see step at VG = −35 V and beyond). Inset: schematic representation of the adopted stress conditions.

Image of FIG. 2.
FIG. 2.

(Color online) Results of a constant-voltage reverse-bias stress test. The three graphs report the variation of (a) gate current, (b) amplitude of the noise on gate current, and (c) threshold voltage during stress time.

Image of FIG. 3.
FIG. 3.

(Color online) Results of the time-resolved EL measurements carried out during stress at VG = −30 V, VD = VS = 0 V (same sample as in Figure 2). The figure on the top represents a schematic micrograph of one of the analyzed samples. Frames below are false-color images reporting the distribution of EL for increasing stress times.

Image of FIG. 4.
FIG. 4.

(Color online) (a) EL spectra measured under reverse-bias conditions on one of the analyzed HEMTs (spectra were collected at several gate voltage levels, with VD = VS = 0 V). (b) A schematic explanation of the reverse-bias EL process.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Schematic representation of the model used to explain the recoverable modifications in gate leakage current and threshold voltage. (b) Dependence of tBD on the initial leakage current, for devices with different initial leakage current levels aged at VG = −30 V, VD = VS = 0 V.

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/content/aip/journal/apl/100/3/10.1063/1.3678041
2012-01-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/3/10.1063/1.3678041
10.1063/1.3678041
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