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(Color online) (a) Atomic bonding geometries on (311)B GaAs surface. The three-dangling bond V site is highlighted. (b) Typical PL decay curves for 440 °C as-grown GaAsN layers with different growth orientations.
(Color online) (a) LT and (b) RT PL spectra for 440 °C samples irradiated by 2 MeV electrons with different fluences. The inset in (a) shows the relationship between the PL lifetime and the DL intensity normalized to BE for as-grown samples at all three growth temperatures. The inset in (b) presents the integrated RT emission intensity for 440 °C samples irradiated at different electron fluences.
(a) Typical time-resolved PL spectra for 440 °C GaAsN irradiated at 3 × 1016 cm−2 electron fluence. (b) Variations of nonradiative lifetime for 440 °C GaAsN with the increase of electron fluence. The lifetime damage coefficients were derived from the solid fitting curves.
(Color online) Geometrical illustration of incident electron directing at the  As direction for GaAs.
Nitrogen incorporation into the group V sub-lattice ([N], in %) and RT PL lifetime (τ pl, in ps) for as-grown GaAsN layers with different growth temperatures (T, in °C) and orientations.
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