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(Color online) (a) Simulation of the conduction band profile and the electron density of a modulation-doped GaAs/AlGaAs core/shell nanowire in radial direction. (b)-(d) SEM images of contacted GaAs/AlGaAs-core/shell-nanowires after annealing at 320 °C for 75 s, at 360 °C for 105 s, and at 370 °C for 10 s, respectively.
(Color online) (a) I-V characteristics of a GaAs/AlGaAs nanowire annealed at 320 °C, for different annealing times. The inset shows the corresponding resistance R 0 at zero bias. (b) Corresponding measurements for an annealing temperature of 360 °C, with R 0 shown in the inset.
(Color online) Conductance G 0 for a set of nanowires for different annealing times ta and temperatures Ta .
(Color online) (a) I-V characteristics of a GaAs/AlGaAs core/shell nanowire with a contact separation of 900 nm at various temperatures. (b) Resistance as a function of temperature.
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