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Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress
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10.1063/1.3679109
/content/aip/journal/apl/100/4/10.1063/1.3679109
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679109
/content/aip/journal/apl/100/4/10.1063/1.3679109
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/content/aip/journal/apl/100/4/10.1063/1.3679109
2012-01-23
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679109
10.1063/1.3679109
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