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Spin transport in memristive devices
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10.1063/1.3679114
/content/aip/journal/apl/100/4/10.1063/1.3679114
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679114
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) I-V characteristics of Co/TaOX/Cu/Py in log-scale and the zoomed-in graph in linear scale (bottom inset). A 10 μA current compliance was used during the negative voltage sweep to limit the current during the formation of the conductive filament (i.e., when setting the ON state). Schematic of device is illustrated in the top inset.

Image of FIG. 2.
FIG. 2.

(Color online) Minor loop MR measured in a 2-point geometry (bottom) at 77 K in a device in the (a) ON state and (b) OFF state. Illustration (top) of the spin transport channel corresponding to the (a) ON state and (b) OFF state. In insets of (a), the major loop MR curve of the ON state is presented and the magnetization orientation of the two ferromagnetic electrodes is shown. Solid and dotted arrows indicate the sweep direction of external magnetic field. Resistances (V/I) were ≈300 Ω in the ON state and ≈130 MΩ in the OFF state.

Image of FIG. 3.
FIG. 3.

(Color online) Minor loop transport MR of a device having a relatively weak spin transport signal simultaneously measured in a (a) 2-point geometry and (b) 4-point geometry. Measurement geometries are illustrated in the insets. Magnetization orientation of the two ferromagnetic electrodes is illustrated in (b). Solid and dotted arrows indicate the sweep direction of external magnetic field for solid and dotted data lines, respectively in each figure.

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/content/aip/journal/apl/100/4/10.1063/1.3679114
2012-01-26
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin transport in memristive devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679114
10.1063/1.3679114
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