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Side-dependent electron escape from graphene- and graphane-like SiC layers
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10.1063/1.3679175
/content/aip/journal/apl/100/4/10.1063/1.3679175
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679175
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Side (upper panel) and top (lower panel) view of silicongraphene (a) and silicongraphane (b). Large (large blue) circles represent Si atoms, medium-sized (yellow) circles represent C atoms, while small (small blue) circles stand for H atoms. The unit cell is highlighted.

Image of FIG. 2.
FIG. 2.

(Color online) QP band structure of silicongraphene (a) and silicongraphane (b). The top of the valence bands is used as energy zero. The dashed horizontal lines indicate the position of the vacuum level(s). The inset shows the wave function at Γ for the lowest conduction band.

Image of FIG. 3.
FIG. 3.

(Color online) Electrostatic potential V (z) averaged over planes parallel to the sheet versus the distance z parallel to the sheet normal for silicongraphane. The two horizontal dashed lines indicate the energies of the lowest empty state and highest occupied state forming the fundamental QP gap.

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/content/aip/journal/apl/100/4/10.1063/1.3679175
2012-01-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Side-dependent electron escape from graphene- and graphane-like SiC layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679175
10.1063/1.3679175
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