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Type-II InP-based lasers emitting at 2.55 μm
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10.1063/1.3679378
/content/aip/journal/apl/100/4/10.1063/1.3679378
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679378

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Band structure of the W-shaped type-II laser. Injection directions of electrons and holes are indicated. (b) Magnification of one period of the active region.

Image of FIG. 2.
FIG. 2.

(Color online) Lasing spectra and electroluminescence spectrum of a 2.31 μm device below threshold. The laser lengths are 1 mm for both cases, the width are 10 μm and 26 μm for the case of the 2.31 μm and 2.55 μm lasers, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) Pulsed threshold current density versus inverse cavity length at 15 °C, for a pulse length of 500 ns and a repetition rate of 250 Hz.

Image of FIG. 4.
FIG. 4.

(Color online) Pulsed threshold current density as a function of temperature for 2.31 μm lasers (black line) and 2.55 μm lasers (red line).

Image of FIG. 5.
FIG. 5.

(Color online) P-J and V-J characteristics of a 1 mm long and 10 μm wide λ = 2.31 μm device. Lasing-operation can be observed up to 0 °C.

Tables

Generic image for table
Table I.

Well thicknesses, compositions, and lasing wavelengths of two different type-II laser designs.

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/content/aip/journal/apl/100/4/10.1063/1.3679378
2012-01-25
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Type-II InP-based lasers emitting at 2.55 μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679378
10.1063/1.3679378
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