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Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment
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10.1063/1.3679395
/content/aip/journal/apl/100/4/10.1063/1.3679395
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679395
/content/aip/journal/apl/100/4/10.1063/1.3679395
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/content/aip/journal/apl/100/4/10.1063/1.3679395
2012-01-25
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679395
10.1063/1.3679395
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