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Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment
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10.1063/1.3679395
/content/aip/journal/apl/100/4/10.1063/1.3679395
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679395

Figures

Image of FIG. 1.
FIG. 1.

(Color online) PL signal at room temperature from as-deposited and laser irradiated samples. The insert shows the center of each band as a function of the laser power.

Image of FIG. 2.
FIG. 2.

Energy filtered transmission electron microscopy of irradiated samples still amorphous at 135 kW/cm2 (a) and with Si-QDs at 143 kW/cm2 (b). The insets are the diffraction patterns.

Image of FIG. 3.
FIG. 3.

(Color online) Si oxidation states, expressed in atomic percentage, as a function of the power density.

Tables

Generic image for table
Table I.

XPS Si2p peaks decomposition and relative molecular configurations.

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/content/aip/journal/apl/100/4/10.1063/1.3679395
2012-01-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679395
10.1063/1.3679395
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