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Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers
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10.1063/1.3679609
/content/aip/journal/apl/100/4/10.1063/1.3679609
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679609
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) UVPL image of wafer section showing details observed to contrast BPDs in the buffer region and the drift layer. (b) shows schematic of cross sectional view of the sample.

Image of FIG. 2.
FIG. 2.

(Color online) UVPL images of (a) BPDs in the drift layer (bright lines) and buffer (dark lines) before UV stressing, (b) UVPL (600–1000 nm emission) image of BPDs generating SFs that propagated into the drift layer after UV stressing, and (c) 445 nm UVPL image after stressing showing SF emission from both buffer and drift layers.

Image of FIG. 3.
FIG. 3.

(Color online) Numerical simulations of carrier concentration at various UV power densities and current injection levels. Inset shows a cross section of the epilayers. The diamond point along the 4000 W/cm2 profile indicates a BPD that converted to TED 17 μm below the buffer/drift interface.

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/content/aip/journal/apl/100/4/10.1063/1.3679609
2012-01-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679609
10.1063/1.3679609
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