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A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
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10.1063/1.3679610
/content/aip/journal/apl/100/4/10.1063/1.3679610
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679610
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) The Monte Carlo simulation flow. (b) An example of the initial CF configuration in LRS: pink sites are Vo, blue sites are O2-, and the top boundary is the oxygen reservoir at the electrode/oxide interface; (c) An example of the resistance evolution during 200 °C baking. (d) The CF configuration when it reaches the failure criterion: sites in pink or lighter color are Vo, and sites in blue or darker color are O2-.

Image of FIG. 2.
FIG. 2.

(Color online) The experimental (a) and simulated (b) failure time cumulative probability at different baking temperatures (250 °C, 200 °C, and 150 °C) for two LRS resistance levels achieved by two set compliance currents (100 μA and 10 μA).

Image of FIG. 3.
FIG. 3.

(Color online) (a) The simulated Arrhenius plot of 50% and 1% failure level and the experimental data (the inset). (b) The simulated 50% and 1% failure time versus the stress voltage at 200 °C for 10 μA compliance case.

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/content/aip/journal/apl/100/4/10.1063/1.3679610
2012-01-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679610
10.1063/1.3679610
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