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(Color online) (a) The schematic image of the measured devices. Pd/Au contacts had 500 nm gap and 500 nm width. All devices have same device configuration and substrate structures. (b) The typical behavior of DWCNT-FETs, p-type FET action by S/S DWCNT, metallic gate independent behavior by M/M and M/S DWCNT, and semiconductor + metallic behavior by S/M DWCNT.
(Color online) (a) The HfO2 thickness dependence of FET current at RT. The p-type current is slightly decreased after HfO2 layer deposition and the n-type carrier rapidly increase to open conduction. More than 10 nm thickness, the characteristics are saturated by completely covering of DWCNTs. The Vg axis is offset at 10−9A. (b) The hysteresis measurement before (bold line) and after deposition (8nm, dashed line). The black arrows indicate sweep direction. The H2O molecules are removed from CNT surfaces by HfO2 deposition. (c) The hysteresis width as function of HfO2 thickness. The reduction of hysteresis lope is saturated more than 10 nm thickness.
(Color online) (a) The Coulomb blockade peaks are observed at 4.2 K. The dashed line squared area indicates Coulomb diamond measured ranges. (b) Three dimensional plot of Coulomb diamond measurement. Each plateau indicates the Coulomb blockade areas corresponding each single quantum state in the quantum dot. The conversion factor of Vg and Vsd is estimated from this dashed line square area. (c) The effective energy gap (right) and the off-region voltages (left) as a function of the DWCNT diameters. The dashed line indicates theoretical predicted value.
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