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Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels
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10.1063/1.3679679
/content/aip/journal/apl/100/4/10.1063/1.3679679
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679679
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Raman spectra of the mechanically exfoliated TiTe2 films at different temperatures. One can see two main Eg and A 1 g phonon modes. The absence of the shoulder near ∼160 cm−1 suggests the high quality, stoichiometry, and low defect concentration in the examined TiTe2 films. The inset shows the SEM image of the “graphene-like” exfoliated TiTe2 film.

Image of FIG. 2.
FIG. 2.

(Color online) Drain current as the function of the source-drain voltage in back-gated FETs with TiTe2 channel and Al/Ti/Au source and drain contacts. The measured I-V characteristics are strongly non-linear with a clear threshold voltage at VDS  = 1.5 V (VGS  = 50 V). The source-drain distance is 8 μm. The inset shows a schematic of the FET device with the TiTe2 channel.

Image of FIG. 3.
FIG. 3.

(Color online) Drain current as the function of the source-drain voltage for the TiTe2 FETs in the dark and under light illumination. The inset shows a SEM image of the tested device with Al/Ti/Au contacts and metal electrodes.

Image of FIG. 4.
FIG. 4.

Drain current as the function of the back-gate voltage at VDS  = 100 mV. Note a number of nearly equidistant peaks in I-V characteristics of the TiTe2 FET at room temperature.

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/content/aip/journal/apl/100/4/10.1063/1.3679679
2012-01-26
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679679
10.1063/1.3679679
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