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(Color online) Raman spectra of the mechanically exfoliated TiTe2 films at different temperatures. One can see two main Eg and A 1 g phonon modes. The absence of the shoulder near ∼160 cm−1 suggests the high quality, stoichiometry, and low defect concentration in the examined TiTe2 films. The inset shows the SEM image of the “graphene-like” exfoliated TiTe2 film.
(Color online) Drain current as the function of the source-drain voltage in back-gated FETs with TiTe2 channel and Al/Ti/Au source and drain contacts. The measured I-V characteristics are strongly non-linear with a clear threshold voltage at VDS = 1.5 V (VGS = 50 V). The source-drain distance is 8 μm. The inset shows a schematic of the FET device with the TiTe2 channel.
(Color online) Drain current as the function of the source-drain voltage for the TiTe2 FETs in the dark and under light illumination. The inset shows a SEM image of the tested device with Al/Ti/Au contacts and metal electrodes.
Drain current as the function of the back-gate voltage at VDS = 100 mV. Note a number of nearly equidistant peaks in I-V characteristics of the TiTe2 FET at room temperature.
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