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The influence of Al composition on point defect incorporation in AlGaN
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10.1063/1.3679681
/content/aip/journal/apl/100/4/10.1063/1.3679681
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679681

Figures

Image of FIG. 1.
FIG. 1.

DLOS spectra tracking the main defect levels identified in UID-GaN and UID-Al x Ga1 x N for x = 0.08, 0.22, and 0.33.

Image of FIG. 2.
FIG. 2.

Energetic position of L2 and L3 in the Al x Ga1 x N band gap. The horizontal line is a guide for the eye.

Image of FIG. 3.
FIG. 3.

Point defect density versus Al mole fraction for defect energy levels L1, L2, and L3 identified in UID-Al x Ga1 x N/n-GaN:Si heterostructures. Densities for defect levels of the UID-GaN control sample are shown for comparison.

Tables

Generic image for table
Table I.

Defect ionization energies relative to the conduction band, corresponding Franck Condon energies, and defect densities for Al x Ga1 x N, x = 0.08, 0.22, and 0.33.

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/content/aip/journal/apl/100/4/10.1063/1.3679681
2012-01-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of Al composition on point defect incorporation in AlGaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3679681
10.1063/1.3679681
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