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DLOS spectra tracking the main defect levels identified in UID-GaN and UID-Al x Ga1 −x N for x = 0.08, 0.22, and 0.33.
Energetic position of L2 and L3 in the Al x Ga1 −x N band gap. The horizontal line is a guide for the eye.
Point defect density versus Al mole fraction for defect energy levels L1, L2, and L3 identified in UID-Al x Ga1 −x N/n-GaN:Si heterostructures. Densities for defect levels of the UID-GaN control sample are shown for comparison.
Defect ionization energies relative to the conduction band, corresponding Franck Condon energies, and defect densities for Al x Ga1 −x N, x = 0.08, 0.22, and 0.33.
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