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Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) 80 K CL spectra for Li-doped MG-ZnO (a) as-grown, annealed in 500 °C and quenched in DI water or slow cooled in air and (b) 5 keV CL spectra comparison and (inset) relative intensity changes of VZn and LiZn related defects in MG-ZnO after quenching and slow cooling process. The slow-cooled MG-ZnO exhibits an additional 3.0 eV peak.

Image of FIG. 2.
FIG. 2.

(Color online) (a) SSRM of slow cooled MG-ZnO samples after 500 °C–550 °C annealing showing contrast between quenched and slow-cooled methods. (b) SIMS of quenched and slow-cooled MG-ZnO after 500–550 °C annealing showing correspondence between Li density and resistivity in slow-cooled samples.

Image of FIG. 3.
FIG. 3.

(Color online) 80 K CL spectra for Li-doped MG-ZnO annealed at 600 °C and slow cooled in air, and [Li] SIMS profile correspondence with LiZn versus VZn DRCLS intensities (inset). The 3.0 eV LiZn increases from 32 nm below the surface to above 72 nm, and corresponds to the [Li] profile in this range. The increasing (decreasing) LiZn (VZn)-related intensities show that LiZn forms by Li filling VZn sites.

Image of FIG. 4.
FIG. 4.

(Color online) SPS spectrum of flash-annealed, slow-cooled Li-implanted HT-ZnO showing onset of photodepopulation from 3.0 eV acceptor state, decreased band bending, and higher Fermi level.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO