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Enhanced carrier injection in pentacene thin-film transistors by inserting a MoO3-doped pentacene layer
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http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3680249
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/content/aip/journal/apl/100/4/10.1063/1.3680249
2012-01-27
2014-10-21

Abstract

We report on the enhanced carrier injection in pentacene thin-film transistors with a thin MoO3-doped pentacene layer between pentacene semiconductor and the source-drain electrodes.Device performance including drain current, field effect mobility, and threshed voltage are improved by employing a MoO3-doped pentacene thin layer. The barrier height at the Au/pentacene interface is lowered from 0.12 to 0.05 eV after inserting a MoO3-doped pentacene thin layer between them. The reduced barrier height is attributed to the formation of a good contact between MoO3-doped pentacene and Au owing to smoothed surface morphology of pentancene and suitable band bending by MoO3doping.

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Scitation: Enhanced carrier injection in pentacene thin-film transistors by inserting a MoO3-doped pentacene layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/4/10.1063/1.3680249
10.1063/1.3680249
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