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Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition
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10.1063/1.3675641
/content/aip/journal/apl/100/5/10.1063/1.3675641
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3675641
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Figures

Image of FIG. 1.
FIG. 1.

SEM images of the dose dependence of the InSb wafer surface evolution, including hillocks and nanoclusters in (a), (e) for a dose of 1 × 1016 cm−2; coarse nanoclusters in (b), (f) for a dose of 3.1 × 1016 cm−2; and NRs capped with nanoclusters in (c), (g) for a dose of 6.9 × 1016 cm−2 and in (d), (h) for a dose of 1.4 × 1016 cm−2. The images on the left [(a)-(d)] and right [(e)-(h)] were collected at 0 and 75° angle of incidence, respectively.

Image of FIG. 2.
FIG. 2.

SEM images of NR formation on the InSb wafer irradiated with (a), (b) 10 kV and (c), (d) 30 kV ions. The images on the left [(a), (c)] and right [(b), (d)] were collected at 0 and 75° angle of incidence, respectively.

Image of FIG. 3.
FIG. 3.

SEM images of the dose dependence of the InSb/GaAs heterostructure surface evolution, including hillocks and nanoclusters in (a), (e) for a dose of 1 × 1016 cm−2; coarse nanoclusters in (b), (f) for a dose of 3.1 × 1016 cm−2; NRs capped with nanoclusters in (c), (g) for a dose of 6.9 × 1016 cm−2, and capless truncated-cone NRs in (d), (h) for a dose of1.4 × 1016 cm−2. The images on the left [(a)-(d)] and right [(e)-(h)] were collected at 0 and 75° angle of incidence, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) (a) The irradiation-time-dependence of d/d0, the ratio of the top diameter, d, to the base diameter, d0 (solid symbols); and of the height, h (open symbols), for NRs on both InSb wafers and InSb/GaAs heterostructures. Linear least-squares fits to h vs. irradiation time are used to determine NR growth and shrinkage rates shown in (a). (b) RPSD vs. frequency obtained from SEM images of irradiated InSb wafers and InSb/GaAs heterostructure with ion doses ranging from 3.1 × 1016 cm−2 to 1.7 × 1017 cm−2; a maximum is apparent at a spatial frequency ∼4 × 10−4 nm−1, which corresponds to 364 nm, the average inter-island spacing.

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/content/aip/journal/apl/100/5/10.1063/1.3675641
2012-01-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3675641
10.1063/1.3675641
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