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Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry
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10.1063/1.3678186
/content/aip/journal/apl/100/5/10.1063/1.3678186
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3678186

Figures

Image of FIG. 1.
FIG. 1.

HRXRD pattern in the θ–2θ geometry for the LSTO film on LAO 〈100〉 substrate.

Image of FIG. 2.
FIG. 2.

(Color online) SE spectra of the films measured at three angles of incidence. The symbols correspond to the experimental data and the lines correspond to the fit using Eq. (1).

Image of FIG. 3.
FIG. 3.

(Color online) Electrical conductivity and Seebeck coefficient of the films measured as a function of temperature.

Tables

Generic image for table
Table I.

Parameters used for fitting the SE data using Eq. (1) with two Lorentz oscillators. is the high frequency dielectric constant, is the plasma frequency, is the damping constant, and , , and are, respectively, the amplitude, energy, and damping of the k th harmonic oscillator.

Generic image for table
Table II.

Electrical properties and Seebeck coefficient of the films at 295 K, measured directly and calculated using SE parameters. σDC and σOpt are, respectively, the conductivities measured directly and calculated using SE data. m* is the effective mass extracted assuming identical carrier concentration (n) and mobility (μ) from SE and Hall measurements. l is the mean free path, while S and SCal are, respectively, the Seebeck coefficients measured directly and calculated using Eq. (5).

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/content/aip/journal/apl/100/5/10.1063/1.3678186
2012-02-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3678186
10.1063/1.3678186
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