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Position-controlled [100] InP nanowire arrays
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10.1063/1.3679136
/content/aip/journal/apl/100/5/10.1063/1.3679136
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3679136
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Figures

Image of FIG. 1.
FIG. 1.

SEM images of as-grown InP NW arrays on a InP (100) substrate with Au diameters (DAu) = 50 nm, pitch = 500 nm, growth temperatures (T) = 460 °C, V/III ratio = 229, and standard total molar fraction (Ftotal). (a), (c) View on a substrate tilted by 40°. (b), (d) Top-view images showing the square shape of vertical NWs with {100} side facets. Circular marks in (b) show three different tilted growth directions. The scale bar is 1 μm for (a), (b) and 100 nm for (c), (d).

Image of FIG. 2.
FIG. 2.

(Color online) Histograms of vertical, tilted, and missing NW fractions varying with different parameters: (a) with DAu = 50 nm, V/III ratio = 229, varying T. (b) With V/III ratio = 229, T = 460 °C, varying DAu. (c) DAu = 50 nm, T = 460 °C, molar fraction of PH3 (FPH3) = 5.5 × 10−3, with varying V/III ratio by changing TMI molar fraction (FTMI). (d) DAu = 50 nm, T = 460 °C, FTMI = 3.8 × 10−5, with varying V/III ratio by changing FPH3. The error bars indicate the standard deviation of our measurements.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Bright-field TEM image of a [100] InP NWs. (b) HRTEM image of the boxed area. The inset shows the Fourier transform of the HRTEM image, displaying a [001] zone axis pattern. (c) PL at 4 K from a single [100] InP NW transferred to an oxidized Si wafer. (d) Effect of HCl on InP NW tapering. (e) High angle annular dark field STEM image of a [100] InP NW grown with HCl at partial pressure 8.33 × 10−4 mbar. The scale bar is 100 nm for (a),(e) and 5 nm for (b).

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/content/aip/journal/apl/100/5/10.1063/1.3679136
2012-01-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Position-controlled [100] InP nanowire arrays
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3679136
10.1063/1.3679136
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