banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Position-controlled [100] InP nanowire arrays
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

SEM images of as-grown InP NW arrays on a InP (100) substrate with Au diameters (DAu) = 50 nm, pitch = 500 nm, growth temperatures (T) = 460 °C, V/III ratio = 229, and standard total molar fraction (Ftotal). (a), (c) View on a substrate tilted by 40°. (b), (d) Top-view images showing the square shape of vertical NWs with {100} side facets. Circular marks in (b) show three different tilted growth directions. The scale bar is 1 μm for (a), (b) and 100 nm for (c), (d).

Image of FIG. 2.
FIG. 2.

(Color online) Histograms of vertical, tilted, and missing NW fractions varying with different parameters: (a) with DAu = 50 nm, V/III ratio = 229, varying T. (b) With V/III ratio = 229, T = 460 °C, varying DAu. (c) DAu = 50 nm, T = 460 °C, molar fraction of PH3 (FPH3) = 5.5 × 10−3, with varying V/III ratio by changing TMI molar fraction (FTMI). (d) DAu = 50 nm, T = 460 °C, FTMI = 3.8 × 10−5, with varying V/III ratio by changing FPH3. The error bars indicate the standard deviation of our measurements.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Bright-field TEM image of a [100] InP NWs. (b) HRTEM image of the boxed area. The inset shows the Fourier transform of the HRTEM image, displaying a [001] zone axis pattern. (c) PL at 4 K from a single [100] InP NW transferred to an oxidized Si wafer. (d) Effect of HCl on InP NW tapering. (e) High angle annular dark field STEM image of a [100] InP NW grown with HCl at partial pressure 8.33 × 10−4 mbar. The scale bar is 100 nm for (a),(e) and 5 nm for (b).


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Position-controlled [100] InP nanowire arrays