1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application
Rent:
Rent this article for
USD
10.1063/1.3680580
/content/aip/journal/apl/100/5/10.1063/1.3680580
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3680580
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) XRD curves of annealed Sb2Te3, Al2Te3, and Al2Sb2Te6 films on Si/SiO2 (100) substrates. (b) Sheet resistance of Sb2Te3, Al2Te3, and Al2Sb2Te6 films as functions of temperature.

Image of FIG. 2.
FIG. 2.

TEM picture of the cross-section of Al2Sb2Te6 based PCRAM cell in set state. (b) MAED picture of Al2Sb2Te6 region shown in Fig. 2(a).

Image of FIG. 3.
FIG. 3.

(Color online) (a) R-V performance of the PCRAM cell with different pulse widths but the same rising and falling slops of 2 ns, and the inset shows the schematic structure of a PCRAM cell. (b) Endurance characteristics of Al2Sb2Te6 based PCRAM cell.

Loading

Article metrics loading...

/content/aip/journal/apl/100/5/10.1063/1.3680580
2012-01-31
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3680580
10.1063/1.3680580
SEARCH_EXPAND_ITEM