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Resistance R vs. Temperature T, (a) for junctions A T -a (gap 600 nm; electrode width 30 μm) and A T -b (gap 800 nm); (b) for B T (gap 700 nm, electrode width 5 μm).
Current I versus voltage V measured (a) for junction A T -b at 4.2 K and (b) for junction B T at 3 K. The inset show a blowup of the zero-resistance branch. The critical current at 3 mA is indicated with an arrow.
Ic (T) for junction B T . The open symbol is Ic at 4.2 K for junction C T , as follows from Fig. 2 inset: plot of (ln(I c ) − (3/2 ln(T)) versus to determine the Thouless energy E th .
Critical current Ic versus applied field (Ha ) (a) at 4.2 K for junctions A T -a (○) and A T -b (□) with Ha in-plane and ⊥ current I; (b) for junction B T at 3 K in three different configurations, in-plane Ha || I (□), Ha ⊥ I (○), and out-of-plane Ha ⊥ I (△). The vertical dotted lines indicate the field at 200 mT for reference purposes.
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