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Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy
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10.1063/1.3681172
/content/aip/journal/apl/100/5/10.1063/1.3681172
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3681172
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Figures

Image of FIG. 1.
FIG. 1.

SEM images of GaP NWs on Si(111). (a) 45° tilted view. Scale bar: 2 μm. (b) Plan view. Scale bar: 200 nm. (c) 90° side view. Scale bar: 1 μm. (d) A single GaP NW. Scale bar: 110 nm.

Image of FIG. 2.
FIG. 2.

SEM images of GaP/GaNP core/shell NWs on Si(111). (a) 45° tilted view. Scale bar: 2 μm. (b) 45° tilted view showing a core/shell NW’s hexagon shape. Scale bar: 200 nm. (c) 90° side view. Scale bar: 2 μm. (d) A single GaP/GaNP NW. Scale bar: 220 nm.

Image of FIG. 3.
FIG. 3.

(Color online) Room Temperature (300K) PL of GaP NW clusters (circle) and GaP/GaNP core/shell NW clusters (diamond). The planar GaNP PL (triangle), which shows larger band tail on the low-energy side, is from Ref. 11. Optical pumping: 500 mW, 532 nm semiconductor green laser. Inset: A 10 μm full scale SEM image of GaP/GaNP core/shell NWs after “dry-transfer.”

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/content/aip/journal/apl/100/5/10.1063/1.3681172
2012-01-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3681172
10.1063/1.3681172
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