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(Color online) Dark field (200) TEM cross-sectional images of (a) the interface between the GaAs buffer layer and the Ge substrate for the sample with initial GaAs layer nucleated at 380 °C, and (b) five-layer InAs/InGaAs DWELL sample on Ge substrate with initial GaAs layer nucleated at 410 °C, and (c) 1.0 μm × 1.0 μm AFM image of an uncapped InAs QD sample with initial GaAs layer nucleated at 380 °C.
(Color online) (a) Room-temperature PL spectra for Ge-based InAs/GaAs quantum-dot samples with different growth temperatures for initial GaAs nucleation layers. The RT PL spectrum of InAs/GaAs QDs grown on a GaAs substrate is also shown as a reference. (b) The Arrhenius plots of the temperature dependence of integrated PL intensity for Ge-based InAs/GaAs quantum-dot samples with initial GaAs nucleated at 350, 380, and 410 °C, respectively.
(Color online) Light output against current characteristic for InAs/GaAs quantum-dot laser grown on Ge substrate for operating temperatures between 20 and 100 °C. The inset shows the laser optical spectrum above threshold at RT.
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