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Thermal conductivity and photoluminescence of light-emitting silicon nitride films
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10.1063/1.3682508
/content/aip/journal/apl/100/5/10.1063/1.3682508
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3682508
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Impact of annealing temperature and silicon concentration on (a) thermal conductivity, k, and (b) effective PL lifetime, τPL . (c)Correlation of the trend of increasing thermal conductivity (squares) and PL lifetime (circles) with anneal temperature for samples with a relative Si concentration of 45.5%. (d) Correlation of the trend of decreasing thermal conductivity (squares) and PL lifetime (circles) with increasing excess silicon concentration for samples annealed at 1000 °C.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Impact of silicon concentration on Young’s modulus and hardness of amorphous SiNx films. The straight line is a best fit to the data and serves mainly as a guide for the reader. (b) SiNx thermal conductivity as a function of silicon concentration for samples annealed at 1000 °C. The solid line shows the predicted trend in thermal conductivity using the measured elastic modulus (best-fit line from (a)) in the calculation of acoustic velocity, and a constant phonon lifetime estimated from a best fit to the data with relative Si concentration <55%.

Image of FIG. 3.
FIG. 3.

Impact of erbium concentration on the thermal conductivity of an Er-doped silicon-rich nitride film with a relative Si concentration of 50%.

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/content/aip/journal/apl/100/5/10.1063/1.3682508
2012-02-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal conductivity and photoluminescence of light-emitting silicon nitride films
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/5/10.1063/1.3682508
10.1063/1.3682508
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