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(Color online) (a) A schematic illustration of the memory device; (b) an image of the fabricated GO based flexible RRAM.
(Color online) The I-V characteristics of the Al/GO/ITO structure with 19.7 nm thick graphene oxide film. The left inset shows the thickness of GO film on SiO2/Si measured by SEM, while the right inset shows AFM image of the GO layer on SiO2/Si.
(Color online) (a) The statistics retention characteristics of the HRS and the LRS at 300 K with the On/Off ratio up to 280; (b) the endurance characteristics of the Al/GO/ITO/PET RRAM cell.
(Color online) Pulse behavior of the Al/GO/ITO/PET memory cell, HRS and LRS is read at +0.3 V. (a) the SET and RESET operations of the devices with different pulsing width at ±5. The HRS and LRS of the devices are measured at +0.3 V and the SET operation is found to be three orders of magnitude slower than the RESET operation; (b) a schematic of oxygen hopping barrier change model.
(Color online) The I-V curves of the Al/GO/ITO memory cell plotted in double logarithmic scale of (a) the SET operation and (b) the RESET operation.
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