Full text loading...
(Color online) (a) Schematic of a spin-valve nanopillar, (b) scanning electron microscopy image of pillar cross-section for 50 × 300 nm2 ellipses showing no notch, a single notch, and double notch pairs, and (c) a typical resistance versus perpendicular applied field hysteresis loop for a sample with no notch pairs.
(Color online) The survival function PNS for the AP and P states for a 50 × 300 nm2 junction with (a) no notch, (b) one notch pair in the center, and (c) double notch pairs on each side. Data is measured against total field, defined as applied field plus a dipole field from the polarizer. AP → P data (for sweeping in the negative field direction) has been reflected about zero field to compare with the P → AP data. Symbols are measured data and solid lines are calculated from the Kurkijärvi model.
(Color online) (a) Out-of-plane polarizer field at 5 nm above the polarizing layer for a device with two pairs of notches. Numbers (1) and (2) indicate preferred nucleation regions where the polarizer field is low and high, respectively. (b) y = 0 cross-section of the polarizer field.
Barrier heights and coercive fields for AP → P, P → AP transitions for different lateral geometries. Data in parenthesis in the double notch column reflects experiments on a double notch pair sample after reversing the direction of polarizer magnetization. Reversal of polarizer in double notch pair structure maintains the asymmetry in the energetics and coercivity.
Article metrics loading...