Full text loading...
(Color online) (a) Large-scale (80 nm × 87 nm) STM image in 3D perspective view12 of MnGa islands on N-polar GaN surface (VS = −0.87 V; IT = 156 pA); (b) zoom-in STM image of island A surface (VS = −0.67 V; IT = 154 pA); (c) similar zoom-in of adatom wetting layer (VS = −0.87 V; IT = 156 pA); region devoid of adatom stripes is labeled “Dev”; adatom protrusions are marked with white circles.
(Color online) (a) Rectangle view (190 nm × 97 nm) STM image showing numerous MnGa islands covering the N-polar GaN surface (VS = −2.44 V; IT = 103 pA); curving dotted lines correspond to GaN step edges; (b) 80 nm × 87 nm STM image corresponding to the dashed outline region shown in (a) and also the image of Fig. 1(a) but acquired ∼2 h earlier (VS = −0.87 V; IT = 156 pA); (c) line cross-sections L1 and L2 as indicated in (a) and (b); (d) line cross-sections L3 and L4. Island layer numbers in (c) and (d) are indicated. A local background subtraction was applied to the image in (b).
(Color online) (a) 50 nm × 49 nm STM image showing 6-layer island (E) with uniform row-structure covered with several atomic chains and 5-layer island (F) with several domain boundaries (VS = −2.45 V; IT = 74 pA); (b) line cross-section corresponding to the line shown in (a). Image in (a) is shown in derivative mode; inset in (b) shows the normal image.
Article metrics loading...