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(Color online) (a) The modeled device structure. The experimental structure has a lateral mesa size described by a radius of 600 nm. (b) The simulated structure of a InGaAs BTBT diode without (solid line) and with (dashed line) BGN.
(Color online) (a) Intrinsic I-V characteristics of the considered device. The simulated data with and without BGN (marked lines) are compared to the experimental data (solid line). The slopes of the currents at the valley are shown with the dotted lines. (b) Extrinsic I-V characteristics of the considered BTBT diodes. The simulated data with the effects of BGN and excess current are compared with the experimental data.
BGN parameters of In0.53Ga0.47As.
Calculated band shifts and total BGN of the device at an acceptor doping concentration of NA = 8 × 1019/cm3 and donor concentration ND = 4 × 1019/cm3.
Excess current parameters.
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