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Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics
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10.1063/1.3682523
/content/aip/journal/apl/100/6/10.1063/1.3682523
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3682523

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic layer structures of (a) hBN/AlN/Al2O3 and (b) hBN:Mg/n-AlGaN/AlN/Al2O3.

Image of FIG. 2.
FIG. 2.

(Color online) (a) XRD θ-2θ scan of hBN/AlN/Al2O3 showing hBN (002) and AlN (002) peaks and (b) rocking curve of the (002) peak of hBN.

Image of FIG. 3.
FIG. 3.

(Color online) Photoluminescence spectra of hBN grown on AlN/Al2O3 templates measured at (a) T = 10 K and (b) T = 300 K.

Image of FIG. 4.
FIG. 4.

(Color online) I-V characteristics of the Mg doped p-type hBN epilayers deposited on Si-doped n-AlGaN with Ni/Au and Ni contacts annealed at different times and temperatures.

Image of FIG. 5.
FIG. 5.

(Color online) I-V characteristics of a p-BN:Mg/n-Al0.62Ga0.38 N/AlN structure with p-contacts annealed at 1020 °C exhibiting a diode behavior. The inset shows the schematic diagram of the p-n structure, in which BN buffer layer is doped with Mg.

Tables

Generic image for table
Table I.

Dependence of FWHM of (002) XRD rocking curve and c-lattice constant (c) on the thickness of the BN low temperature buffer layer (Lb).

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/content/aip/journal/apl/100/6/10.1063/1.3682523
2012-02-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3682523
10.1063/1.3682523
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