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(Color online) Schematic layer structures of (a) hBN/AlN/Al2O3 and (b) hBN:Mg/n-AlGaN/AlN/Al2O3.
(Color online) (a) XRD θ-2θ scan of hBN/AlN/Al2O3 showing hBN (002) and AlN (002) peaks and (b) rocking curve of the (002) peak of hBN.
(Color online) Photoluminescence spectra of hBN grown on AlN/Al2O3 templates measured at (a) T = 10 K and (b) T = 300 K.
(Color online) I-V characteristics of the Mg doped p-type hBN epilayers deposited on Si-doped n-AlGaN with Ni/Au and Ni contacts annealed at different times and temperatures.
(Color online) I-V characteristics of a p-BN:Mg/n-Al0.62Ga0.38 N/AlN structure with p-contacts annealed at 1020 °C exhibiting a diode behavior. The inset shows the schematic diagram of the p-n structure, in which BN buffer layer is doped with Mg.
Dependence of FWHM of (002) XRD rocking curve and c-lattice constant (c) on the thickness of the BN low temperature buffer layer (Lb).
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