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(Color online) Ga 3p, Si 2p, Al 2p and Hf 4f core level spectra after (a) H plasma, (b) 1 nm Si, (c), (d) 1 nm Al2O3, (e)–(g) 2 nm HfO2, and (h) post-metallization anneal. The Si 2p/Ga 3p peak area ratio is proportional to the thickness of elemental Si: 10 Å deposited; 0.5 Å consumed upon HfO2 deposition and additional 2.5 Å consumed upon post-metallization anneal 550 °C for 30 min in N2.
(Color online) C-V characteristics of a W/2 nm HfO2/1 nm Al2O3/1 nm a-Si/In0.53Ga0.47As/InP(001) MOS capacitor measured at 25 °C in the dark. C acc corresponds to an EOT of 0.89 nm. Continuous line: fit of the experimental 1 MHZ curve. Inset: D it distribution extracted from the C-V curves using the high-low frequency method; red dotted lines delimit the In0.53Ga0.47As band gap.
(Color online) CG –VG characteristics measured on a gate‐first self‐aligned MOSFET fabricated with a W/5 nm HfO2/1 nm Al2O3/1 nm a-Si gate stack on NID-In0.53Ga0.47As, with raised S/D and self-aligned Ni-InGaAs contacts. Inset: schematics of the fabricated device.
(Color online) ID –VG characteristics for VDS = 50 mV (squares) and VDS = 0.5 V (triangles) and measured on the MOSFET of Fig. 3. Inset: effective mobility vs. sheet carrier density.
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