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Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
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10.1063/1.3683472
/content/aip/journal/apl/100/6/10.1063/1.3683472
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3683472
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Ga 3p, Si 2p, Al 2p and Hf 4f core level spectra after (a) H plasma, (b) 1 nm Si, (c), (d) 1 nm Al2O3, (e)–(g) 2 nm HfO2, and (h) post-metallization anneal. The Si 2p/Ga 3p peak area ratio is proportional to the thickness of elemental Si: 10 Å deposited; 0.5 Å consumed upon HfO2 deposition and additional 2.5 Å consumed upon post-metallization anneal 550 °C for 30 min in N2.

Image of FIG. 2.
FIG. 2.

(Color online) C-V characteristics of a W/2 nm HfO2/1 nm Al2O3/1 nm a-Si/In0.53Ga0.47As/InP(001) MOS capacitor measured at 25 °C in the dark. C acc corresponds to an EOT of 0.89 nm. Continuous line: fit of the experimental 1 MHZ curve. Inset: D it distribution extracted from the C-V curves using the high-low frequency method; red dotted lines delimit the In0.53Ga0.47As band gap.

Image of FIG. 3.
FIG. 3.

(Color online) CG VG characteristics measured on a gate‐first self‐aligned MOSFET fabricated with a W/5 nm HfO2/1 nm Al2O3/1 nm a-Si gate stack on NID-In0.53Ga0.47As, with raised S/D and self-aligned Ni-InGaAs contacts. Inset: schematics of the fabricated device.

Image of FIG. 4.
FIG. 4.

(Color online) ID VG characteristics for VDS  = 50 mV (squares) and VDS  = 0.5 V (triangles) and measured on the MOSFET of Fig. 3. Inset: effective mobility vs. sheet carrier density.

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/content/aip/journal/apl/100/6/10.1063/1.3683472
2012-02-08
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3683472
10.1063/1.3683472
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