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Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
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10.1063/1.3683472
/content/aip/journal/apl/100/6/10.1063/1.3683472
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3683472
/content/aip/journal/apl/100/6/10.1063/1.3683472
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/content/aip/journal/apl/100/6/10.1063/1.3683472
2012-02-08
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3683472
10.1063/1.3683472
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