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ZnO nanorods-graphene hybrid structures for enhanced current spreading and light extraction in GaN-based light emitting diodes
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One-dimensional and two-dimensional hybrid structures, composed of vertical ZnOnanorods grown on large-area graphene, are successfully integrated onto the GaN/InGaN light emitting diodes(LEDs). Compared with GaNLED without transparent conducting electrode, current injection and light emission increased almost 2–3 times, respectively, by the introduction of graphene based conducting electrode. Additional ∼66% increase in light emission was achieved by growing the ZnOnanorods on the graphene, which is consistent with the finite difference time domain modeling result. Furthermore, electroluminescence intensity profiles confirm the uniform light emission with high brightness in GaNLED with the ZnO nanorods-graphene hybridelectrode.
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