Full text loading...
(Color online) (a) Schematic of the layered structure of fabricated all-CNT-FETs. All electrodes (source, drain, and gate) and channels consist only of SWNTs. The substrate and dielectric layer are composed of flexible polymer. The top layer is the PVA-coated SWNT global gate electrode, the middle layer is the PVA adhesion layer acting as a dielectric, and the bottom layer contains PVA-coated SWNT source/drain electrodes and the SWNT channel. (b) Schematic cross-section diagram of the device. (c) SEM image of the FET channel region obtained prior to removal from the master Si substrate. Both the channel length and width are 5 μm. (d) Photograph of a crumpled, yet functional, all-CNT-FET device.
(Color online) (a) Optical transmission spectra of the flexible all-CNT-FET in the visible range. Inset shows the locations where the spectra were obtained. (b) Optical image of the fabricated device in front of some printed logos (top) and the corresponding layout pattern (bottom). Scale bar: 1 cm.
(Color online) (a) Transfer characteristics of the flexible FET when flat, bent (R = 3.5 mm), more bent (R = 1.0 mm), and wrinkled. All I-V curves were characterized at V DS = −2 V. (b) Mechanical stress tolerance values of the flexible all-CNT-FET over 100 wrinkle cycles. The open circles and magenta squares indicate the maximum drain current (I D,max) and the transconductance (g m), respectively. The black solid line is drawn to guide the eye.
(Color online) Comparison of curvature-dependent drain current (I D) degradation between our all-CNT-FET and other flexible transistors based on SWNTs, amorphous In-Ga-Zn-O, amorphous Si, and pentacene. The radius of curvature (R) for Refs. 3 and 8 were calculated from reported strain values.
Article metrics loading...