Erratum: “Unintentional doping induced splitting of G peak in bilayer graphene” [Appl. Phys. Lett. 99, 233110 (2011)]
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(Color online) Transfer characteristics of a typical BLG FET at a source-drain voltage of 0.05 V, which shows that the Dirac point is locating at a value larger than 100 V. The inset shows the dependence of source-drain current on the source-drain voltage, which indicates a good ohmic contact between the Ni-Au alloy and BLG has been achieved.
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