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Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach
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10.1063/1.3683525
/content/aip/journal/apl/100/6/10.1063/1.3683525
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3683525
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Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of a Mn impurity in the GaAs layer near a thin Al0.3Ga0.7As barrier. Wavefunction of the hole bound to the acceptor penetrates this barrier. Tunneling probability is proportional to the integral of the hole wavefunction over the region to the right of the barrier.

Image of FIG. 2.
FIG. 2.

(Color online) Cross-section of the neutral acceptor wavefunction in the (110) plane containing the Mn dopant. Wavefunction amplitude is color-coded according to the log scale. Atomic positions are shown with circles: Mn atom is in the center, in double vertical rows cations (Ga) are to the right and anions (As) to the left. Vitual cations Al0.3Ga0.7 in the barrier are shown in white.

Image of FIG. 3.
FIG. 3.

(Color online) Dependence of wavefunction integral on right side of barrier on Mn spin orientation: the main frame shows the dependence on zenithal angle θ for different values of the azimuthal angle ϕ with respect to [100] and the inset shows an azimuthal plot of in-plane anisotropy.

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/content/aip/journal/apl/100/6/10.1063/1.3683525
2012-02-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/6/10.1063/1.3683525
10.1063/1.3683525
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